羅奕凱 研究員

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羅奕凱 教授

Ikai Lo

研究室電話: 07-5252000-3734

研究室: 物理館PH3003

到職年月：1993/08

分子束磊晶物理實驗室及高磁場實驗室

Email:ikailo@mail.nsysu.edu.tw

 

   學歷

● 美國紐約州立大學水牛城分校物理博士(1989)

● 國立清華大學物理學士(1980)

    經歷

● 國立中山大學理學院院長(2010-2014)

● 國科會高屏地區奈米核心設施實驗室 主持人

● 國立中山大學系主任(2000-2002)

● 國立中山大學物理系教授(1997-迄今)

● 國立中山大學物理系副教授(1993-1997)

● 美國空軍箂特實驗室博士後研究(1989-1993)

    專長

● 半導體物理、凝體物理、磁物理、分子束磊晶術

    任教科目

● 普通物理、半導體專題、奈米科技概論

    研究方向及重點

● 半導體新材料的研發

● 奈米結構之量子效應

● 紅外線元件材料(InAs/GaSb)之研究

● 藍光半導體元件材料(GaN)之研究

    研究計劃

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●  2020 高效能III族氮化物之冷白光微米LED技術(3/3)

●  2019 日月光半導體製造股份有限公司-高效能III族氮化物之冷白微米LED技術產業化之研究開發計畫(3)

●  2019 高效能III族氮化物之冷白光微米LED技術(2/3)

●  2018 日月光半導體製造股份有限公司-高效能III族氮化物之冷白微米LED技術產業化之研究開發計畫(2)

●  2018 氮化銦鋁氮化銦鎵量子井異質磊晶之研究與其在自旋電子學之應用

●  2018 高效能III族氮化物之冷白光微米LED技術(1/3)

●  2018 臺俄國合計畫-氮化鎵波導結構元件之非線性光學研究(3/3)

●  2017 臺俄國合計畫-氮化鎵波導結構元件之非線性光學研究(2/3)

●  2017 氮化銦鎵 氮化銦鋁量子井及其在自旋電子學上的應用之研究(3/3)

●  2016 產學合作計畫-高效率III族氮化物微米碟之冷白光LED技術及其產業化之研發(2/2)

●  2016 臺俄國合計畫-氮化鎵波導結構元件之非線性光學研究(1/3)

●  2016 氮化銦鎵 氮化銦鋁量子井及其在自旋電子學上的應用之研究(2/3)

    期刊論文

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● C. D. Tsai, K. Lo, Y. C. E. Wang, C. C. Yang, H. Y. Yang, H. E. Y. Shih, H. C. Huang, M. M. C. Chou, L. E. Huang, and B. O. Tseng, 'Indium-Incorporation with Inxga1-Xn Layers on Gan-Microdisks by Plasma-Assisted Molecular Beam Epitaxy', Crystals, 9 (2019).
● S. T. You, I. Lo, H. J. Shih, H. C. Hang, and M. M. C. Chou, 'Strain of M-Plane Gan Epitaxial Layer Grown on Beta-Ligao2 (100) by Plasma-Assisted Molecular Beam Epitaxy', Aip Advances, 8 (2018).
● C. D. Tsai, I. Lo, Y. C. Wang, C. C. Yang, S. T. You, H. Y. Yang, H. C. Huang, and M. M. C. Chou, 'Finite Growth of Ingan/Gan Triple-Quantum-Well Microdisks on Liaio(2) Substrate', Aip Advances, 8 (2018).
● I. Lo, 'Advances in Gan Crystals and Their Applications', Crystals, 8 (2018).
● Y. T. Su, T. C. Chang, T. M. Tsai, K. C. Chang, T. J. Chu, H. L. Chen, M. C. Chen, C. C. Yang, H. C. Huang, I. Lo, J. C. Zheng, and S. M. Sze, 'Suppression of Endurance Degradation by Applying Constant Voltage Stress in One-Transistor and One-Resistor Resistive Random Access Memory', Japanese Journal of Applied Physics, 56 (2017).
● Y. C. Lin, I. Lo, H. C. Shih, M. M. C. Chou, and D. M. Schaadt, 'Growth and Characterization of M-Plane Gan Thin Films Grown on Gamma-Lialo2 (100) Substrates', Scanning (2017).
● P. V. Chinta, O. Lozano, P. V. Wadekar, W. C. Hsieh, H. W. Seo, S. W. Yeh, C. H. Liao, L. W. Tu, N. J. Ho, Y. S. Zhang, W. Y. Pang, I. Lo, Q. Y. Chen, and W. K. Chu, 'Evolution of Metallic Conductivity in Epitaxial Zno Thin Films on Systematic Al Doping', Journal of Electronic Materials, 46 (2017), 2030-39.
● P. H. Chen, T. C. Chang, K. C. Chang, T. M. Tsai, C. H. Pan, C. C. Shih, C. H. Wu, C. C. Yang, Y. T. Su, C. Y. Lin, Y. T. Tseng, M. C. Chen, R. C. Wang, C. C. Leu, K. H. Chen, I. Lo, J. C. Zheng, and S. M. Sze, 'Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory', Ieee Transactions on Electron Devices, 63 (2016), 4769-75.
● M. J. Yang, P. V. Wadekar, W. C. Hsieh, H. C. Huang, C. W. Lin, J. W. Chou, C. H. Liao, C. F. Chang, H. W. Seo, S. T. You, L. W. Tu, I. K. Lo, N. J. Ho, S. W. Yeh, H. H. Liao, Q. Y. Chen, and W. K. Chu, 'Mgo/Cu2o Superlattices: Growth of Epitaxial Two-Dimensional Nanostructures', Journal of Electronic Materials, 45 (2016), 6285-91.
● P. H. Chen, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, Y. T. Su, C. H. Wu, W. C. Su, C. C. Yang, M. C. Chen, C. H. Tu, K. H. Chen, I. Lo, J. C. Zheng, and S. M. Sze, 'Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory', Ieee Transactions on Electron Devices, 63 (2016), 4288-94.
● Y. C. Lin, I. Lo, Y. C. Wang, C. C. Yang, C. H. Hu, M. M. C. Chou, and D. M. Schaadt, 'Characterization of M-Plane Gan Thin Films Grown on Misoriented Gamma-Lialo2 (100) Substrates', Journal of Crystal Growth, 450 (2016), 197-202.
● C. C. Yang, I. Lo, C. H. Hu, H. C. Huang, and M. M. C. Chou, 'Growth of Inn Hexagonal Microdisks', Aip Advances, 6 (2016).
● C. H. Hu, I. Lo, Y. C. Hsu, C. H. Shih, W. Y. Pang, Y. C. Wang, Y. C. Lin, C. C. Yang, C. D. Tsai, and G. Z. L. Hsu, 'Growth of Ingan/Gan Quantum Wells with Graded Ingan Buffer for Green-to-Yellow Light Emitters', Japanese Journal of Applied Physics, 55 (2016).
● F. Y. Jin, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, C. Y. Lin, P. H. Chen, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng, and S. M. Sze, 'Reducing Operation Voltages by Introducing a Low-K Switching Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory', Applied Physics Express, 9 (2016).
● H. X. Zheng, T. C. Chang, K. C. Chang, T. M. Tsai, C. C. Shih, R. Zhang, K. H. Chen, M. H. Wang, J. C. Zheng, I. Lo, C. H. Wu, Y. T. Tseng, and S. M. Sze, 'Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory', Applied Physics Express, 9 (2016).
● P. H. Chen, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, C. Y. Lin, F. Y. Jin, M. C. Chen, H. C. Huang, M. H. Wang, I. Lo, J. C. Zheng, and S. M. Sze, 'Improving Performance by Doping Gadolinium into the Indium-Tin-Oxide Electrode in Hfo2-Based Resistive Random Access Memory', Ieee Electron Device Letters, 37 (2016), 584-87.
● T. M. Tsai, K. C. Chang, T. C. Chang, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, Y. T. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou, and S. M. Sze, 'Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory', Ieee Electron Device Letters, 37 (2016), 408-11.
● P. H. Chen, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, T. J. Chu, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng, and S. M. Sze, 'Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of Hfo2-Based Resistive Random Access Memory', Ieee Electron Device Letters, 37 (2016), 280-83.
● P. H. Chen, K. C. Chang, T. C. Chang, T. M. Tsai, C. H. Pan, C. Y. Lin, F. Y. Jin, M. C. Chen, H. C. Huang, I. Lo, J. C. Zheng, and S. M. Sze, 'Effects of Erbium Doping of Indium Tin Oxide Electrode in Resistive Random Access Memory', Applied Physics Express, 9 (2016).
 
●  S. T. You, I. Lo, J. K. Tsai, and C. H. Shih, 'Epitaxial Growth of M-Plane Gan on Zno Micro-Rods by Plasma-Assisted Molecular Beam Epitaxy', Aip Advances, 5 (2015).
 
●  C.H. Shih, I. Lo, S.T. You, C.D. Tsai, B.H. Tseng, Y.F. Chen, C.H. Chen, G.Z.L. Hsu, Direct growth of heteroepitaxial CuInSe2 on GaN (0001) by molecular beam epitaxy, Thin Solid Films, 574 (2015) 132-135.
 
●  I. Lo, Y.C. Wang, Y.C. Hsu, C.H. Shih, W.Y. Pang, S.T. You, C.H. Hu, M.M.C. Chou, G.Z.L. Hsu, Electrical contact for wurtzite GaN microdisks, Applied Physics Letters, 105 (2014).
 
●  C.H. Shih, I. Lo, S.T. You, C.D. Tsai, B.H. Tseng, Y.F. Chen, C.H. Chen, C.H. Lee, W.I. Lee, G.Z.L. Hsu, The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN, Aip Advances, 4 (2014).
 
● Y.C. Hsu, I. Lo, C.H. Shih, W.Y. Pang, C.H. Hu, Y.C. Wang, C.D. Tsai, M.M.C. Chou, G.Z.L. Hsu, Green light emission by InGaN/GaN multiple-quantum-well microdisks, Applied Physics Letters, 104 (2014).

● C. Junesand, M.H. Gau, Y.T. Sun, S. Lourdudoss, I. Lo, J. Jimenez, P.A. Postigo, F.M. Morales, J. Hernandez, S. Molina, A. Abdessamad, G. Pozina, L. Hultman, P. Pirouz, Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth, Materials Express, 4 (2014) 41-53.

    會議論文
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    其他
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●  J. Y. Lin and H. D. Yang, “MgCNi3: A Conventional and Yet Puzzling Superconductor”, “Superconductivity Research at the Leading Edge”, Page 111-130, Edited by P. S. Lewis, 2004, Nova Science Publisher Inc.

●  B. K. Chaudhuri, H. Sakata, S. Mollah, and H. D. Yang, “Ferroelectric nanocrystal dispersed oxide glasses”, in “Encyclopedia of Nanoscience and Nanotechnology 2004” edited by H. S. Nalwa, Volume 3: Page 335-357.

● S. Mollah, H. D. Yang, and B. K. Chaudhuri, MgB2 superconductor: a review, Indian J. Phys. 77A (1), 9 (2003).

●  H. D. Yang and J. –Y Lin, Low temperature specific heat studies on the pairing states of high-Tc superconductors: a brief review, J. Phys. Chem. Solids 62, 1681 (2001).