● 美國匹茲堡大學物理博士(1976)

●  國立中山大學物理系主任(1996-1998)

● 國立中山大學物理系教授(1994-)

● 褔特汽車公司科學研究實驗室客座科學家(1993-1994)

● 美國聖母大學、亞利桑那州立大學研究副教授、研究科學家(1986-1992)

● 美國康乃爾大學資深研究員(1983-1986)

● 高雄師範大學副教授、教授(1976-1983)

● 表面物理、 凝體物理、 計算物理、 化學物理

● 量子物理

● 寬能隙半導體的電子及結構特性

● 柰米尺度鐵電材料的鐵電特性

● 半導體薄膜成長機制的分子動力模擬

● 2009 非局部交換位能及自旋軌道耦合對含過渡金屬之半導體的磁性特性的影響

● 2008 金屬-單層分子膜-金屬及金屬-氮化鋁薄膜-金屬接點的電流-電壓特性曲線的計算

● 2007 金屬-單層分子膜-金屬及金屬-氮化鋁薄膜-金屬接點的電流-電壓特性曲線的計算

● 2006 第一原理計算方法中交換能量計算的改進

● 2005 發展新的計算分子電子元件的電流的方法

● 2009 Outstanding referee: Physical Review Letters & Physical Review B

● S. C. Ray, H. C. Hsueh, C. H. Wu, C. W. Pao, K. Asokan, M. T. Liu, H. M. Tsai, C. H. Chuang, W. F. Pong, J. W. Chiou, M. H. Tsai, J. M. Lee, L. Y. Jang, J. M. Chen, and J. F. Lee, 'Local Atomic and Electronic Structures and Ferroelectric Properties of Pbzr0.52ti0.48o3: An X-Ray Absorption Study (Vol 99, 042909, 2011)', Applied Physics Letters, 99 (2011).

● Y. P. Chiu, B. C. Huang, M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. H. Tsai, M. Hong, and J. Kwo, 'Atomic-Scale Determination of Band Offsets at the Gd2o3/Gaas (100) Hetero-Interface Using Scanning Tunneling Spectroscopy', Applied Physics Letters, 99 (2011).

● M. H. Tsai, 'A Matrix Method for the Calculation of Nonlocal Exchange Potential and Spin-Orbit Coupling in the First-Principles Calculation Method', European Physical Journal B, 84 (2011), 29-35.

● C. W. Pao, C. T. Wu, H. M. Tsai, Y. S. Liu, C. L. Chang, W. F. Pong, J. W. Chiou, C. W. Chen, M. S. Hu, M. W. Chu, L. C. Chen, C. H. Chen, K. H. Chen, S. B. Wang, S. J. Chang, M. H. Tsai, H. J. Lin, J. F. Lee, and J. H. Guo, 'Photoconduction and the Electronic Structure of Silica Nanowires Embedded with Gold Nanoparticles', Physical Review B, 84 (2011).

● S. C. Ray, H. C. Hsueh, C. H. Wu, C. W. Pao, K. Asokan, M. T.  Liu, H. M. Tsai, C. H. Chuang, W. F. Pong, J. W. Chiou, M. H. Tsai, J. M. Lee, L. Y. Jang, J. M. Chen, and J. F. Lee, 'Loycal Atomic and Electronic Structures and Ferroelectric Properties of Pbzr0.52ti0.48o3: An X-Ray Absorption Study', Applied Physics Letters, 99 (2011).

●  S. C. Ray, H. M. Tsai, C. W. Pao, W. H. Chang, W. F. Pong, J. W. Chiou, and M. H. Tsai, 'Electronic and Bonding Properties of Fe- and Ni Based Hydrogenated Amorphous Carbon Thin Films by X-Ray Absorption, Valence-Band Photoemission and Raman Spectroscopy', Diamond and Related Materials, 20 (2011), 886-90.

● J. W. Chiou, S. C. Ray, H. M. Tsai, C. W. Pao, F. Z. Chien, W. F. Pong, C. H. Tseng, J. J. Wu, M. H. Tsai, C. H. Chen, H. J. Lin, J. F. Lee, and J. H. Guo, 'Correlation between Electronic Structures and Photocatalytic Activities of Nanocrystalline-(Au, Ag, and Pt) Particles on the Surface of Zno Nanorods', Journal of Physical Chemistry C, 115 (2011), 2650-55.

● T. H. Lu, and M. H. Tsai, 'Electronic and Transport Properties of a Nanometer-Scale Au/Aln(0001)/Au Junction from First-Principles', Applied Physics Letters, 98 (2011).

● T. H. Lu, and M. H. Tsai, 'Electronic and Transport Properties of a Nanometer-Scale Au/Aln(0001)/Au Junction from First-Principles', Applied Physics Letters, 98 (2011).

● C. W. Pao, S. C. Ray, H. M. Tsai, Y. S. Chen, H.-C. Chen, I.-N. Lin and W. F. Pong, J. W. Chiou, M.-H. Tsai, N. G. Shang, P. Papakonstantinou, and J.-H. Guo, “Effect of Si-doping on the electronic structures and electron field emission of graphene nanoflakes,” J. Phys. Chem. C114, 8161 (2010).

● C. –M. Lin, K. –Te. Wu, T. –L. Hung, H. –S. Sheu, M. –H. Tsai, J. –F. Lee, and J. –J. Lee, “Phase transitions in Lu2O3 under high-pressure,” Solid State Commun. 150, 1564-1569 (2010).

● M. –H. Tsai and T. –H. Lu, “Electronic and transport properties of a molecular junction with asymmetric contacts,” Nanotechnology 21, 065203 (2010).

● M. –H. Tsai and T. –H. Lu, “Electronic and transport properties of a molecular junction with asymmetric contacts,” Nanotechnology 21, 065203 (2010).

● C.-M. Lin, H.-S. Sheu, M.-H. Tsai, B.-R. Wu, and S.-R. Jian, “High pressure induced phase transition in sulfur doped indium phosphide: an angular-dispersive X-ray diffraction and Raman study,” Solid State Commun. 149, 136 (2009)

● Y. –H. Tang and M. –H. Tsai, “Electronic structures of the quaternary wide-band-gap semiconductors (SiC)1-x(AlN)x,” Bull. Amer. Phys. Soc. 49, 905 (2004).

● M. –H. Tsai, “Self-limitation of the tilt of the energy bands in polar nm-scale GaN films,” Bull. Amer. Phys. Soc. 49, 365 (2004).

● Y. –H. Tang, M. –H. Tsai, C. C. Wu and S. J. Bai, “Electronic properties calculated for heterocyclic aromatic,” Bull. Amer. Phys. Soc. 48, 570 (2003).

● M. –H. Tsai, A. Das, and S. K. Dey, “First-principles study of the electronic structure of monoclinic hafnia,” The 6th Asian Workshop on First-Principles Electronic Structure Calculations, November 10-12, 2003, Tsukuba, Japan.

● M. –H. Tsai, Y. –H. Tang, and S. K. Dey, “Coexistence of Ferroelectricity and Ferromagnetism in nm-thick SrBi2Ta2O11 Film,” Bull. Amer. Phys. Soc. 48, 1032 (2003).